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by Cary Y. Yang,Akemi Miura-Hamada,Eiji Takeda
Download Hot-Carrier Effects in MOS Devices fb2
Engineering
  • Author:
    Cary Y. Yang,Akemi Miura-Hamada,Eiji Takeda
  • ISBN:
    0126822409
  • ISBN13:
    978-0126822403
  • Genre:
  • Publisher:
    Academic Press; 1 edition (December 4, 1995)
  • Pages:
    312 pages
  • Subcategory:
    Engineering
  • Language:
  • FB2 format
    1540 kb
  • ePUB format
    1157 kb
  • DJVU format
    1341 kb
  • Rating:
    4.5
  • Votes:
    762
  • Formats:
    mobi docx lrf rtf


Электронная книга "Hot-Carrier Effects in MOS Devices", Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada

Электронная книга "Hot-Carrier Effects in MOS Devices", Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada. Эту книгу можно прочитать в Google Play Книгах на компьютере, а также на устройствах Android и iOS. Выделяйте текст, добавляйте закладки и делайте заметки, скачав книгу "Hot-Carrier Effects in MOS Devices" для чтения в офлайн-режиме.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications.

Eiji Takeda (Author), Cary Y. Yang (Author), Akemi Miura-Hamada (Author) & 0 more. This book is derived from Dr. Takeda's book in Japanese, Hot-Carrier Effects (published in 1987 by Nikkei Business Publishers). ISBN-13: 978-0126822403. Takeda's original work was merely a starting point for developing this much more complete and fundamental text on increasingly important topic.

Print Book & E-Book

Print Book & E-Book. ISBN 9780126822403, 9780080926223. The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei .

Hot-Carrier Effects at Low Temperature and Low Voltage oceedings{EI, title {Hot-Carrier Effects in Mos Devices}, author {Eiji Takeda and Cary Y. Yang and Akemi Miura-Hamada}, year {1995} }. Eiji Takeda.

Hot-Carrier Effects at Low Temperature and Low Voltage. Dependence of Hot-Carrier Phenomena on Device Structure. As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices. Gate-to-Drain Overlatpped Devices (GOLD). oceedings{EI, title {Hot-Carrier Effects in Mos Devices}, author {Eiji Takeda and Cary Y. Eiji Takeda, Cary Y. Chapter Headings): MOS Device Fundamentals. Hot-Carrier Injection Mechanisms. Hot-Carrier Device Degradation.

Eiji Takeda, Cary Y. The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications

Eiji Takeda, Cary Y. However, the new book is much more than a translation

Eiji Takeda The state-of-the-art and future perspective of hot-carrier effects in MOS devices are discussed from the viewpoint of: (1) the AC versus DC hot-carrier degradation.

Detrapping phenomena in stressed MOS devices are observed by monitoring electrical characteristics after a constant current stress is applied. The state-of-the-art and future perspective of hot-carrier effects in MOS devices are discussed from the viewpoint of: (1) the AC versus DC hot-carrier degradation mechanism, (2) initial stage degradation, (3) a hot-carrier effect specific to p-channel MOSFET's, (4) new hot-carrier effects in the ∼ . ωm region, (5) hot-carrier resistant device structure

A device degradation model due to hot carrier effects has been used to analyze the jitter and phase noise performance in an open loop voltage-controlled oscillator. Environmental Effects on Electronic Devices in Mexico.

A device degradation model due to hot carrier effects has been used to analyze the jitter and phase noise performance in an open loop voltage-controlled oscillator. The oscillation frequency of the voltage-controlled oscillator decreases by approximately 100 to 200 MHz versus the bias voltage and the RMS jitter increases by 40 ps under different phase-locked loop output frequencies after 4 hours of stress time.

by Eiji Takeda, Cary Y.

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the bookThe book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the fieldThe logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutionsProvides the most complete review of device degradation mechanisms as well as drain engineering methodsContains the most extensive reference list on the subject

Anen
Great book!
Grarana
This text is an excellent state of the art review of this subject. The key element of the book is an exhaustive list of references.