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by Francis Balestra,G. Ghibaudo
Download Device and Circuit Cryogenic Operation for Low Temperature Electronics fb2
Engineering
  • Author:
    Francis Balestra,G. Ghibaudo
  • ISBN:
    1441948988
  • ISBN13:
    978-1441948984
  • Genre:
  • Publisher:
    Springer; Softcover reprint of hardcover 1st ed. 2001 edition (December 3, 2010)
  • Pages:
    262 pages
  • Subcategory:
    Engineering
  • Language:
  • FB2 format
    1501 kb
  • ePUB format
    1900 kb
  • DJVU format
    1144 kb
  • Rating:
    4.9
  • Votes:
    428
  • Formats:
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About this book Francis Balestra.

The first two chapters cover bulk silicon and SOI MOSFETs.

Автор: Francis Balestra; G. Ghibaudo Название: Device and Circuit . Low Temperature and Cryogenic Applications in Medicine and Surgery; Wen-Jai Yang, S. Mochizuki.

2010 Язык: ENG Размер: 2. 9 x 1. 0 x . 5 cm Основная тема: Engineering Рейтинг: Поставляется из: Германии.

cle{, title {Device and circuit cryogenic operation for low-temperature . 3. SOI MOSFETs F. Balestra, G. Ghibaudo. 4. Silion-Germanium heterojunction bipolar transistor .

cle{, title {Device and circuit cryogenic operation for low-temperature electronics }, author {Francis Balestra and G{'e}rard Ghibaudo}, journal {IEEE Circuits and Devices Magazine}, year {2001}, volume {18}, pages {54-54} }. Francis Balestra, Gérard Ghibaudo. Published in IEEE Circuits and Devices Magazine 2001. 5. Heterojunction transistors at low temperature F. Aniel, R. Adde. 6. Quantum effects and devices Y. Omura. 7. Circuits and applications J. Deen.

2. Device physics and electrical performance of bulk Silicon MOSFETs; G. Ghibaudo, F. Balestra. SOI MOSFETs; F. Silion-Germanium heterojunction bipolar transistor; . Heterojunction transistors at low temperature; F. Quantum effects and devices; Y. Circuits and applications; J.

Hot carrier stress was performed in advanced nMOSFETs devices with . nm gate oxide thickness. The first two chapters cover bulk silicon and SOI MOSFETs.

Device and Circuit Cryogenic Operation for Low Temperature Electronics by Francis Balestra and G Ghibaudo. Cryogenic Engineering: Fifty Years of Progress (International Cryogenics Monograph Series) by Klaus D Timmerhaus and Richard Reed. Polymers at Cryogenic Temperatures by Susheel Kalia and Shao-Yun Fu. Liquid Acquisition Devices for Advanced In-Space Cryogenic Propulsion Systems by Jason William Hartwig. Cryogenic Operation of Silicon Power Devices (Power Electronics and Power Systems) by Ranbir Singh and B Jayant Baliga.

Includes bibliographical references. Personal Name: Balestra, Francis. Personal Name: Ghibaudo, Ge?rard. Rubrics: Cryoelectronics Electronic apparatus and appliances Thermal properties. Download PDF book format. Download DOC book format. Lasance, András Poppe.

Electronics fundamentals : circuits and devices, by: Goldberg, Joel, 1931- Published: (1988)

Electronics fundamentals : circuits and devices, by: Goldberg, Joel, 1931- Published: (1988). Electronics fundamentals : circuits and devices : lab manual, by: Capon, Robert J. Published: (1988).

of The Electronics Handbook, the field has grown and changed . PSpice for Circuit Theory and Electronic Devices is one of a series of five PSpice books.

of The Electronics Handbook, the field has grown and changed tremendously. With a focus on fundamental theory. Build Your Own Transistor Radios A Hobbyist's Guide to High-Performance and Low-Powered Radio Circuits. 48 MB·7,298 Downloads·New! and Low-Powered Radio Circuits offers complete projects with detailed schematics and insights on how.

The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials . Device and Circuit Cryogenic Operation for Low Temperature Electronics Francis Balestra,Gerard Ghibaudo,G.

The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas. Все результаты Поиска книг Google Библиографические данные.

Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.